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| inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC2845 description low noise high gain high current-gain bandwidth product applications designed for use in uhf low noise amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 25 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 2.5 v i c collector current-continuous 70 ma p c collector power dissipation @t c =25 0.2 w t j junction temperature 125 t stg storage temperature range -55~125 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC2845 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 15v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 2v; i c = 0 0.1 a h fe dc current gain i c = 20ma ; v ce = 10v 40 200 f t current-gain?bandwidth product i e = -20ma ; v ce = 10v 4.5 ghz c ob output capacitance i e = 0; v cb = 10v; f= 1.0mhz 1.0 1.5 pf s 21e 2 insertion power gain 8.5 10.5 db gum power gain i c = 20ma; v ce = 10v; f= 0.8ghz 10 12 db nf noise figure i c = 5ma; v ce = 10v; f= 0.8ghz 1.8 3 db isc website www.iscsemi.cn 2 |
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